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CSD19537Q3 - 100-V N-Channel Power MOSFET

Description

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Figure 3-1.

Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Lead free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • SON 3.3-mm × 3.3-mm plastic package 2.

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Full PDF Text Transcription

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CSD19537Q3 SLPS549B – AUGUST 2015 – REVISED NOVEMBER 2022 CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead free terminal plating • RoHS compliant • Halogen free • SON 3.3-mm × 3.3-mm plastic package 2 Applications • Primary Side Isolated Converters • Motor Control 3 Description This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. S1 8D S2 7D S3 G4 D Figure 3-1.
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