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CSD17578Q3A - 30V N-Channe Power MOSFET

Description

This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Features

  • 1 Low Qg and Qgd.
  • Low RDS(on).
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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Full PDF Text Transcription

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17578Q3A SLPS525A – SEPTEMBER 2014 – REVISED JANUARY 2016 CSD17578Q3A 30 V N-Channel NexFET™ Power MOSFETs 1 Features •1 Low Qg and Qgd • Low RDS(on) • Low Thermal Resistance • Avalanche Rated • Pb-Free • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Control FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 7.9 1.7 VGS = 4.5 V VGS = 10 V 1.5 8.2 6.3 UNIT V nC nC mΩ mΩ V .
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