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ZXTS1000E6 - 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE

Description

A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

Features

  • Low Saturation Transistor High Gain - 300 minimum Low VF, fast switching Schottky Mobile telecomms, PCMCIA & SCSI DC-DC Conversion.

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ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package. SOT23-6 FEATURES • • • • • Low Saturation Transistor High Gain - 300 minimum Low VF, fast switching Schottky Mobile telecomms, PCMCIA & SCSI DC-DC Conversion APPLICATIONS ORDERING INFORMATION DEVICE ZXTS1000E6TA ZXTS1000E6TC DEVICE MARKING 1000 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ISSUE 1 - NOVEMBER 2000 1 ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS.
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