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ZXTP2039F - PNP silicon planar medium power transistor

Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Features

  • Low saturation voltage for reduced power dissipation.
  • 1 to 2 amp high current capability.
  • Pb-free.
  • SOT23 package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V(BR)CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. www.DataSheet4U.com Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23 package Applications ■ Power MOSFET gate driving ■ Low loss power switching Ordering information Pin out - top view Device ZXTP2039FTA ZXTP2039FTC Reel size 7” 13” Tape width 8mm 8mm Quantity per reel 3,000 10,000 Device marking P39 Issue 3 - August 2005 © Zetex Semiconductors plc 2005 1 www.zetex.
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