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ZXTN25012EFH - NPN medium power transistor

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Features

  • High power dissipation SOT23 package.
  • High peak current.
  • Very high gain.
  • Low saturation voltage.
  • 6V reverse blocking voltage.

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Other Datasheets by Zetex (Diodes Incorporated)

Part Number Description
ZXTN25012EFL NPN Transistor
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Full PDF Text Transcription

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ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
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