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ZXTDBM832 - DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Description

Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.

Features

  • Low Equivalent On Resistance.
  • Extremely Low Saturation Voltage (150mV @1A).
  • hFE characterised up to 6A.
  • IC=4.5A Continuous Collector Current.
  • 3mm x 2mm MLP.

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ZXTDBM832 MPPS™ Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 47m ; IC= 4.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packges Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (nom 0.
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