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ZXT14P20DX - 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Description

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications.

Features

  • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=5A Continuous Collector Current MSOP8 package C B.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXT14P20DX SuperSOT4™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 20m ; IC= -5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
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