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ZXT13N20DE6 - 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Description

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications.

Features

  • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=4.5A Continuous Collector Current SOT23-6 package SOT23-6.

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Datasheet Details

Part number ZXT13N20DE6
Manufacturer Zetex Semiconductors
File Size 432.62 KB
Description 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Datasheet download datasheet ZXT13N20DE6 Datasheet
Additional preview pages of the ZXT13N20DE6 datasheet.

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Full PDF Text Transcription

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ZXT13N20DE6 SuperSOT4™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 38m ; IC= 4.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=4.
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