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ZXMP6A18K - P-channel enhancement mode MOSFET

Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

Features

  • Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. D G S Features • • • • • Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package Applications • • Motor drive Disconnect switches Ordering information Device ZXMP6A18KTC Reel size (inches) 13 Tape width 16mm Quantity per reel Pinout - Top view 2500 units Device marking ZXMP 6A18 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.
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