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ZXMN4A06K 40V N-channel enhancement mode MOSFET
Summary
V(BR)DSS= -40V; RDS(ON) = 0.05⍀; ID = 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
• • • • •
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Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package
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Applications
• • • • DC - DC converters Audio output stages Relay and solenoid driving Motor control
Ordering information
Device ZXMN4A06KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500
Device marking
ZXMN 4A06
Pinout - Top view
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
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