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ZXMN3G32DN8 - 30V SO8 dual N-channel MOSFET

Description

This new generation Trench MOSFET from Zetex

Features

  • low onresistance and fast switching speed. Features.
  • Low on-resistance.
  • 4.5V gate drive capability.
  • Fast switching bullet D1 G1.

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ZXMN3G32DN8TA 30V SO8 dual N-channel MOSFET
ZXMN3A01 30V N-Channel MOSFET
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Full PDF Text Transcription

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ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features • Low on-resistance • 4.5V gate drive capability • Fast switching bullet D1 G1 Applications • DC-DC Converters • Power management functions • Motor Control • Backlighting Ordering information DEVICE ZXMN3G32DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 S1 S1 G1 S2 G2 Device marking ZXMN 3G32D G2 D2 S2 D1 D1 D2 D2 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.
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