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DISCONTINUED
ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322
Summary
V(BR)DSS 20
RDS(on) (Ω) 0.060 @ VGS= 4.5V 0.120 @ VGS= 2.5V
ID (A) 8.5
Description
This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices
Features
• Low on-resistance • Superior thermal performance (versus to SOT23) • 2.5V gate drive capability • DFN 2x2 package
Applications
• Buck/Boost DC-DC Converters • Motor Control • LED Lighting
Ordering information
DEVICE ZXMN2F34MATA
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Device marking
1M4
D G
S
GS D
Issue 3 - May 2008
© Zetex Semiconductors plc 2008
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