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ZUMT619 - NPN SILICON POWER (SWITCHING) TRANSISTOR

Features

  • 500mW POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super323™ SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * LCD backlighting inverter circuits * Boost functions in DC-DC converters ZUMT619 DEVICE TYPE ZUMT619 COMPLEMENT ZUMT720 PARTMARKING T63 RCE(sat) 160mΩ at 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25°C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE 50 50 5 2 1.
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