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ZTX857 - NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

Features

  • 300 Volt VCEO.
  • 3 Amps continuous current.
  • Up to 5 Amps peak current.
  • Very low saturation voltage.
  • Ptot= 1.2 Watt ZTX857 C B E.

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Full PDF Text Transcription

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NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 300 Volt VCEO * 3 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt ZTX857 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 330 300 6 5 3 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
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