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ZTX690B - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features

  • 45 Volt VCEO.
  • Gain of 400 at IC=1 Amp.
  • Very low saturation voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 – MAY 94 FEATURES * 45 Volt VCEO * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers * Battery powered circuits * Motor drivers ZTX690B C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg VALUE 45 45 5 6 2 1.5 1 5.7 -55 to +200 UNIT V V V A A W W mW/°C °C Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
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