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ZTX337C - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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www.DataSheet4U.com NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – MARCH 94 ZTX337C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 50 45 5 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C 100 800 750 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)EBO ICBO VCE(sat) VBE(on) 250 170 200 12 50 45 5 100 0.7 1.
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