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ZTX1151A - PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features

  • VCEO= -40V.
  • 3 Amp Continuous Current.
  • 5 Amp Pulse Current.
  • Low Saturation voltage.
  • High Gain ZTX1151A C B E E-Line TO92 Compatible.

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ZTX1051A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain ZTX1151A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 1 -55 to +200 UNIT V V V A A mA W °C ZTX1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
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