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ZMX40M - DUAL MAGNETIC FIELD SENSOR

Description

This device is a special tangential field difference sensor with two AMR (Anisotropic Magneto-Resistive) bridges for field movement measurements or field comparative measurements.

Features

  • Output voltage proportional to magnetic field Hy across each chip.
  • Both chips are in the same orientation and chip centres are 3mm apart in Y direction.
  • Magnetic fields vertical to the chip level Hz are not effective.
  • Disturbing fields Hx up to 30 kA/m are allowed.
  • Extremely small chip distance from the top side of package for accurate measurement When the two peaks are the same amplitude, the magnet must be mid-way between the two chips. Therefore.

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Other Datasheets by Zetex (Diodes Incorporated)

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Full PDF Text Transcription

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DUAL MAGNETIC FIELD SENSOR ZMX40M DESCRIPTION This device is a special tangential field difference sensor with two AMR (Anisotropic Magneto-Resistive) bridges for field movement measurements or field comparative measurements. The ZMX40M contains two extremely sensitive magnetic sensor chips, mounted parallel to each other in an SM8 package, employing the magneto-resistive effect of thin film permalloy. It allows the measurement of magnetic fields or the detection of magnetic parts. The sensors each consist of a chip covered with thin film permalloy stripes which form a Wheatstone bridge, whose output voltage is proportional to the magnetic field component Hy. A field Hx, which is perpendicular to Hy, is necessary to suppress the hysteresis and to bias the sensors into the linear region.
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