The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE
ISSUE 2 – JANUARY 1998 FEATURES * VHF to UHF operation * Common Cathode Dual Diode * Monolithic construction APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators PARTMARKING DETAIL ZDC833A – C2A
PIN CONFIGURATION
1
ZDC833A
2
1 3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER Forward Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg VALUE 200 330 -55 to +150 UNIT mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). (Each Diode)
PARAMETER Reverse Breakdown Voltage Reverse Leakage Current Temperature Coefficient Diode Capacitance Capacitance Ratio Figure of Merit SYMBOL V BR MIN. 25 TYP. MAX.