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ZC834 - SOT23 SILICON VARIABLE CAPACITANCE DIODES

Features

  • Close Tolerance C-V Characteristics.
  • High Tuning Ratio.
  • Low IR Enabling Excellent Phase Noise Performance (IR Typically.

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Full PDF Text Transcription

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SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg MAX 200 330 SOT23 UNIT mA mW °C -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb =25°C) PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Temperature Coefficient of Capacitance SYMBOL VBR IR MIN 25 0.2 0.03 10 0.
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