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BFS17L - NPN SILICON PLANAR RF TRANSISTORS

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BFS17H NPN SILICON PLANAR RF TRANSISTORS

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SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — BFS17L - E1L BFS17H - E1H BFS17L BFS17H C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 25 15 2.5 50 25 330 -55 to +150 UNIT V V V mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector Cut-Off Current Static Forward Current Transfer Ratio BFS17L BFS17H SYMBOL I CBO MIN. TYP. MAX. 10 10 UNIT nA µA CONDITIONS. V CB=10V, I E=0 V CB=10V, I E=0, T amb = 100°C h FE 25 70 20 100 200 125 1.0 1.3 GHz GHz pF 1.5 2.0 4.5 -45 pF pF dB dB I C=2.0mA, V CE=1.
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