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BFN17 - SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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www.DataSheet4U.com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN17 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN16 DG E C B SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -250 -250 -5 -500 -200 -100 -1 -65 to +150 UNIT V V V mA mA mA W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO MIN. -250 -250 -5 -100 -20 -100 -0.4 -0.9 25 40 40 Typ.100 Typ. 2.5 MHz pF MAX.
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