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ZMD68304N - Dual N-Channel Power MOSFET

Description

MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Dual DIE in one package.

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Datasheet Details

Part number ZMD68304N
Manufacturer ZMJ
File Size 649.04 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet ZMD68304N Datasheet

Full PDF Text Transcription

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ZMJ SEMICONDUCTOR CO., LTD ● General Description The ZMD68304N combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Dual DIE in one package ●Application ■ DC/DC Converters in Computing ■ Isolated DC/DC Converters in Telecom and Industrial ZMD68304N Dual N-Channel Power MOSFET ● Product Summary VDS1 =30V VDS2 =30V RDS(ON)1 =4.5mΩ RDS(ON)2 =2.7mΩ ID1 =60A ID2 =95A DFN5ⅹ6 ●Ordering Information: Part NO.
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