ZN65C1R070L
Description
The ZN65C1R070L is a 650V, 70 mΩ Gallium Nitride (Ga N) FET in an 8 x 8 DFN package. It is a normally-off device that bines Ziener Tech’s latest high-voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
2. Features and Benefits
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Wide gate safety margin
- Capable of reverse conduction
- Low gate charge
- Ro HS pliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft- switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with monly-used gate drivers
3. Applications
- Fast charger
- Tele power
- Data center
- Lighting
4. Key Specifications
Table 1. Key Specifications
Symbol VDS, max ID, max RDS(on), typ QG, typ QRR, typ
Parameter Drain-source voltage Continuous drain current @Tc = 25°C Drain-source on-state resistance Total gate charge Reverse recovery...
