SI3401 - P-Channel MOSFET

Datasheet Details

Part number	SI3401
Manufacturer	ZHONGGUI
File Size	199.05 KB
Description	P-Channel MOSFET
Datasheet	SI3401 Datasheet
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DONGGUAN ZHONGGUI ELECTRONICS CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SI3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability D MARKING: R1 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG G S Value -30 ±12 -4.

Published: Feb 19, 2019 |