Datasheet Details
| Part number | YJS12G06A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 572.54 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJS12G06A Datasheet
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| Part number | YJS12G06A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 572.54 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJS12G06A Datasheet
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|
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Split Gate Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Voltage VGS Drain Current G TC=25℃ ID TC=100℃ Pulsed Drain Current C IDM Avalanche energy L=0.5mH C EAS Power Dissip
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