• Part: C717DB
  • Description: HIGH POWER THYRISTOR
  • Manufacturer: YZPST
  • Size: 172.72 KB
Download C717DB Datasheet PDF
YZPST
C717DB
Features : . All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High d V/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) C717 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM d V/dt (4) 75 m A (3) 1000 V/sec Conducting - on state Parameter Average value of on-state current Peak one cpstcle surge (non repetitive) current I square t Latching current Holding current Peak on-state voltage Critica...