SI2302
FEATURE
Trench FET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A2SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature
Symbol
VDS VGS ID IS PD RθJA TJ TSTG
Value
20 ±8 2.1 0.6 0.35 357 150 -55 ~+150
Unit V
A W ℃/W ℃
YANGJING MICROELECTRONICS
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Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
V(BR)DSS VGS(th) IGSS IDSS r DS(on) gfs
VGS = 0V, ID =10µA VDS =VGS, ID =50µA VDS =0V, VGS =±8V VDS =20V, VGS =0V VGS =4.5V, ID =3.6A VGS =2.5V, ID...
