• Part: XP9561GI
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 248.78 KB
Download XP9561GI Datasheet PDF
YAGEO
XP9561GI
Description XP9561 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID -40V 16mΩ -36A TO-220CFM(I) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage -40 VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 -36 -23 -140 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Param...