XP70T03GJ
Description
XP70T03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-251 package is widely preferred for all mercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID
GD S
30V 9mΩ 60A
TO-251(J)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
+20
W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 175
℃
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum...
