XP6NA3R2CST
Description
XP6NA3R2C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SPPAK 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
BVDSS RDS(ON)
60V 3.2mΩ
S SG S SPPAK 5x6
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TC=25℃
Drain Current, VGS @ 10V6(Silicon Limited)
ID@TC=25℃
Drain Current, VGS @ 10V6(Package Limited)
ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM
Drain Current , VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
PD@TC=25℃ PD@TA=25℃ EAS
Total Power Dissipation Total Power Dissipation3...
