XP6NA1R4CXT
Description
XP6NA1R4C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6X package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
BVDSS RDS(ON)
60V 1.45mΩ
PMPAK® 5x6X
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature...
