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XP6A100M - DIAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

switching performance.

efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP6A100M
Manufacturer YAGEO
File Size 210.01 KB
Description DIAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6A100M Datasheet

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Full PDF Text Transcription

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XP6A100M Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description XP6A100 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 D1 G2 S1 60V 100mΩ 3.
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