XP6679GH
Description
XP6679 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
-30V 9mΩ -75A
S TO-252(H)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
-30
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20 -75 -50 -300 89 0.71
V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter...
