XP65SL145AFI
Description
XP65SL145AF series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink
BVDSS
RDS(ON) ID3
650V 0.145Ω
21A
G DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Parameter Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4 Peak Diode Recovery dv/dt5
TSTG TJ
Storage Temperature Range...
