XP65SL130DP
Description
XP65SL130D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all mercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON) ID3,4
650V 0.13Ω 26.2A
TO-220(P)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS VGS ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1
+20
+30
A dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
Single Pulse...
