XP65SL105AFS
Description
XP65SL105AF series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS
RDS(ON) ID3
650V 105mΩ 30.8A
GD S
TO-263(S)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20
+30
A dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation Total Power Dissipation6 Single Pulse...
