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XP65SA190ADI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP65SA190AD series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP65SA190ADI
Manufacturer YAGEO
File Size 255.71 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP65SA190ADI Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP65SA190ADI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free S Description XP65SA190AD series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3,4 650V 0.