• Part: XP60SC380DH
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 215.16 KB
Download XP60SC380DH Datasheet PDF
YAGEO
XP60SC380DH
Description XP60SC380D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3 600V 0.38Ω 10A TO-252(H) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS VGS ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 +30 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation6 Single Pulse Avalanche Energy4 50 dv/dt Peak Diode...