XP60SC085DIT
Description
XP60SC085D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS
RDS(ON) ID3,6
600V 85mΩ
33A
G DS
TO-220CFM-T(IT)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,6 Drain Current, VGS @ 10V3,6 Pulsed Drain Current1
+30
A dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total...
