• Part: XP60SA380ADIT
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 272.09 KB
Download XP60SA380ADIT Datasheet PDF
YAGEO
XP60SA380ADIT
Description XP60SA380AD series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3,6 600V 0.388Ω 10A G DS TO-220CFM-T(IT) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS VGS ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,6 Drain Current, VGS @ 10V3,6 Pulsed Drain Current1 +20 +30 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total...