• Part: XP60SA290DWL
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 696.70 KB
Download XP60SA290DWL Datasheet PDF
YAGEO
XP60SA290DWL
Description XP60SA290D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-247 package is widely preferred for mercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. BVDSS RDS(ON) ID5 600V 0.29Ω 13.3A TO-247 (WL) . Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V5 Drain Current, VGS @ 10V5 Pulsed Drain Current1 +30 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation Sing...