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XP60SA180DR - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP60SA180D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP60SA180DR
Manufacturer YAGEO
File Size 152.76 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP60SA180DR Datasheet

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XP60SA180DIN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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XP60SA180DR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free S Description XP60SA180D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 600V 0.
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