XP60BM160R
Description
XP60BM160 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-262 package is widely preferred for mercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.
BVDSS
RDS(ON) ID3,4
600V 0.16Ω 21A
TO-262(R)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS VGS ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1
+20
+30
A dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V )
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
Single Pulse Avalanche Energy5
200 dv/dt
Peak...
