XP60AN4K8K
Description
XP60AN4K8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.
BVDSS
RDS(ON) ID3
600V 4.8Ω 1.8A
D SOT-223
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS ID@TC=25℃ IDM PD@TA=25℃ EAS TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation5 Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
+30
20 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient5
Value 45
Units ℃/W
1 202312051YAGEO
Electric...
