XP60AN2K3H
Description
XP60AN2K3 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
BVDSS
RDS(ON) ID3
600V 2.37Ω
4A
TO-252(H)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation5 Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
+30
8 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum...
