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XP5521GM - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP5521 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP5521GM
Manufacturer YAGEO
File Size 264.03 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP5521GM Datasheet

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Full PDF Text Transcription

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XP5521GM Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1 S1 Description XP5521 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 100V 150mΩ 2.5A -100V 160mΩ -2.5A D2 The SO-8 package is widely preferred for all commercial- G1 G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch S1 S2 applications.
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