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XP4P016I - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP4P016 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP4P016I
Manufacturer YAGEO
File Size 217.94 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP4P016I Datasheet

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Other Datasheets by YAGEO

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XP4P016H P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP4P016P P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP4P012LEH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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XP4P013LEP P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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XP4P016I Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP4P016 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
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