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XP3N9R5AYT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3N9R5A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3N9R5AYT
Manufacturer YAGEO
File Size 423.97 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3N9R5AYT Datasheet

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Full PDF Text Transcription

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XP3N9R5AYT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Size & Low RDS(ON) ▼ RoHS Compliant & Halogen-Free G S Description XP3N9R5A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) 30V 9.5mΩ D D D D S S S G PMPAK® 3 x 3 Absolute Symbol Maximum RatingPsa@ramTejt=er25o.
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