• Part: XP3N5R0JV
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 196.06 KB
Download XP3N5R0JV Datasheet PDF
YAGEO
XP3N5R0JV
Description AXP436N054R0sersieesrieasre afroemin Andovvaantecded d Peoswigenr inanodvasteilidcodnespigrnocaensds steilcichonnolopgroycteossactheiechvenotlhoegylowtoesatcphoiesvseiblteheonl-orweseistapnocessaibnlde foans-t rsewsiitscthaincgepearnfodrmfaanscte.s Iwt itpcrhoivnigdespethrfeordmeasnigcnee. r Iwt ithpraonvideexstretmhe deeffsicigiennetrdwevitihceanforeuxtsremineaewffidcieenrat ndgeeviocfepfoowr eursaepipnliacawtioidnes.range of power applications. The TTOO--225210S psahcokrtagleeadispawckidaeglye ipsrepfrerfreerdredfofroraalll mercialindustrial tthhrroouugghh-hhooleleapaplpicliactaiotinosnsw. it Thhoeutlloewadt-hceurtmteadl. resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID 30V 5mΩ 62A TO-251VS(JV) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V...